New Nano Research Paper on CMOS-Compatible PbS Quantum Dot Photodetectors
Our collaborative paper “Self-assembled monolayer-modified hole transport layers for high-performance CMOS-compatible PbS quantum dot photodetectors” has been published in Nano Research.
PbS colloidal quantum dots are attractive for short-wave infrared photodetection because their spectral response is tunable and their films can be processed from solution. For practical imaging systems, inverted device architectures are especially important because they are compatible with CMOS readout circuits.
The work focuses on improving the hole transport layer in inverted PbS quantum dot photodetectors. By introducing self-assembled monolayer modification, the study addresses interfacial recombination and transport losses that can limit device performance.
This publication adds another step toward scalable, CMOS-compatible short-wave infrared photodetector technology.
Haodong TANG
Assistant Professor
My research interests include optoelectronic devices, colloidal quantum dots and CMOS image sensors.